NXP - PBSS5540Z,115 SOT223 TRANSISTOR

Category: NXP

Manufacturer:	Nexperia
Product Category:	Bipolar Transistors - BJT
RoHS:	Details
Mounting Style:	SMD/SMT
Package/Case:	SOT-223-3
Transistor Polarity:	PNP
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	40 V
Collector- Base Voltage VCBO:	40 V
Emitter- Base Voltage VEBO:	6 V
Maximum DC Collector Current:	5:00 AM
Pd - Power Dissipation:	2000 mW
Gain Bandwidth Product fT:	120 MHz
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 150 C
Qualification:	AEC-Q101
Packaging:	Cut Tape
Packaging:	MouseReel
Packaging:	Reel
DC Current Gain hFE Max:	250 at 500 mA, 2 V
Height:	1.7 mm
Length:	6.7 mm
Technology:	Si
Width:	3.7 mm
Brand:	Nexperia
DC Collector/Base Gain hFE Min:	250 at 500 mA, 2 V, 200 at 1 A, 2 V, 150 at 2 A, 2 V, 50 at 5 A, 2 V
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	1000
Subcategory:	Transistors
Part # Aliases:	9.34055E+11
Unit Weight:	1 g